SIE804DF Datasheet, PDF (5/7 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

New Product
SiE804DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
140
120
40
100
30
80
20
60
40
10
20
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
0
25
50
75
100
125
150
T_C - Case Temperature (°C)
Power Derating, Junction-to-Case
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69091
S09-0143-Rev. A, 02-Feb-09
www.vishay.com
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