SI5504BDC Datasheet, PDF (5/12 Pages) Vishay Siliconix – N- and P-Channel 30-V (D-S) MOSFET

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N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.20
I_D = 3.1 A
0.16
Si5504BDC
Vishay Siliconix
T_J = 150 °C
T_J = 25 °C
0.12
25 °C
0.08
125 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.4
2.2
I_D = 250 µA
2.0
1.8
1.6
1.4
1.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
*Limited by r_DS(on)
0.04
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.0001 0.001 0.01 0.1 1
10
Time (sec)
Single Pulse Power
100 1000
100 µs
Document Number: 74483
S-71327-Rev. A, 02-Jul-07
1
0.1
T_A = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s, 10 s
dc
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
*V_GS minimum V_GS at which r_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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