SI4532CDY Datasheet, PDF (5/15 Pages) Vishay Siliconix – N- and P-Channel 30 V (D-S) MOSFET

N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.25
Si4532CDY
Vishay Siliconix
0.20
T_J = 150 °C
T_J = 25 °C
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
I_D = 250 µA
0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
Limited by R_DS(on)*
10
0.15
0.10
T_J = 125 °C
0.05
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10 µs
100 µs
1 ms
1
10 ms
T_A = 25 °C
Single Pulse
0.1
BVDSS Limited
100 ms
1s
10 s
100 s, DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 64805
www.vishay.com
S11-0652-Rev. B, 11-Apr-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000