SI1072X_10 Datasheet, PDF (5/8 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

Si1072X
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
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Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.01 ^0.02
Notes:
P _DM
0.001
0.0001
10^-4
Single Pulse
10^-3
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 540 ° C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10^-2
10^-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73892.
Document Number: 73892
S10-2542-Rev. E, 08-Nov-10
www.vishay.com
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