SD853C30S50K Datasheet, PDF (5/9 Pages) Vishay Siliconix – Fast Recovery Diodes (Hockey PUK Version), 990 A

SD853C..S50K Series
Fast Recovery Diodes _{Vishay High Power Products}
(Hockey PUK Version), 990 A
18000
At Any Rated Load Condition And With
16000
50% Ra t ed
V_RRM Applied Following Surge
Initial T_J= 125 °C
14000
@60 Hz 0.0083 s
@50 Hz 0.0100 s
12000
10000
8000
6000
SD853C..S50K Series
4000
1
10
100
Number Of Equa l Amplitude Half Cyc le Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
T_J = 25°C
1000
T_J= 125°C
SD853C..S50K Series
100
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InstantaneousForward Voltage (V)
Fig. 9 - Forward Voltage Drop Characteristics
20000
18000
16000
14000
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T_J= 125°C
No Voltage Reapplied
50%Rated V_RRM Reapplied
12000
10000
8000
6000 SD853C..S50K Series
4000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
0.1
SD853C..S50K Series
0.01
Steady State Value
0.001
R_thJ-hs = 0.04 K/ W
(Single Side Cooled)
R_thJ-hs = 0.02 K/ W
(Double Side Cooled)
(DC Operation)
0.0001
0.001 0.01 0.1
1
10 100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z_thJ-hs Characteristics
300
250
V_FP
I
200
T_J = 125°C
150
T_J = 25°C
100
50
SD853C..S50K Series
0
0
200 400 600 800 1000 1200 1400 1600 1800 2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 11 - Typical Forward Recovery Characteristics
Document Number: 93182
Revision: 14-May-08
For technical questions, contact: [e-mail]
www.vishay.com
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