SD803C04S10C_12 Datasheet, PDF (5/9 Pages) Vishay Siliconix – Fast Recovery Diodes (Hockey PUK Version), 845 A

SD803C..C Series
Fast Recovery Diodes _{Vishay High Power Products}
(Hockey PUK Version), 845 A
10000
9000
8000
At Any Rated Load Condition And With
Rated V_RRM Applied Following Surge.
Initial T_J = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
7000
6000
5000
SD803C..C Series
4000
1
10
100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
0.1
SD803C..C Series
0.01
0.001
0.001 0.01
Steady State Value
R _thJ-hs = 0.076 K/ W
(Single Side Cooled)
R _thJ-hs = 0.038 K/ W
(Double Side Cooled)
(DC Operation)
0.1
1
10 100
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance Z_thJ-hs Characteristics
12000
11000
10000
9000
Maximum Non Repetitive Surge Current
VersusPulse Train Duration.
Initial T_J= 125°C
No Voltage Reapplied
Rated V_RRMReapplied
8000
7000
6000
5000
4000 SD803C..C Series
3000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
2.2
SD803C..S10C Series
T_J= 125 °C; Vr = 30V
2.1
I _FM = 1000 A
Square Pulse
2
1.9
500 A
1.8
1.7
250 A
1.6
10
100
Rate Of Fall Of Forward Current - di/dt (A/ µs)
Fig. 11 - Recovery Time Characteristics
10000
1000
T_J= 25°C
100
T_J= 125°C
SD803C..C Series
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Instantaneous Forward Voltage (V)
Fig. 9 - Forward Voltage Drop Characteristics
130
120
I _FM = 1000 A
Square Pulse
110
100
500 A
90
80
250 A
70
60
50
40
SD803C..S10C Series
30
T_J= 125 °C; Vr = 30V
20
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 12 - Recovery Charge Characteristics
Document Number: 93180
Revision: 04-Aug-08
For technical questions, contact: [e-mail]
www.vishay.com
5