IRFZ44_11 Datasheet, PDF (5/9 Pages) Vishay Siliconix – Power MOSFET

Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFZ44, SiHFZ44
Vishay Siliconix
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V_DS
Vary t_p to obtain
required I_AS
R_G
10 V
t_p
L
D.U.T.
I_AS
0.01 Ω
+
- ^VDD
V_DS
I_AS
V_DS
t_p
V_DD
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91291
S11-0517-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000