IRFR9110 Datasheet, PDF (5/8 Pages) Intersil Corporation – 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
Vishay Siliconix
Fig. 9 - Maximum Drain Current vs. Case Temperature
V_DS
V_GS
R_G
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+_VDD
Fig. 10a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
t_d(off) t_f
90 %
V_DS
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91279
S-81392-Rev. A, 07-Jul-08
www.vishay.com
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