IRFBC20 Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)

Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFBC20, SiHFBC20
Vishay Siliconix
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91106
S-81243-Rev. A, 21-Jul-08
www.vishay.com
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