IRFB16N50K Datasheet, PDF (5/8 Pages) International Rectifier – SMPS MOSFET

IRFB16N50K, SiHFB16N50K
Vishay Siliconix
20
15
10
5
0
25
50
75
100 125 150
TC , Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+_{- VDD}
Fig. 10a - Switching Time Test Circuit
V_DS
90 %
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.001
1E-006
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
V_DS
L
Driver
RG
20 V
tp
D.U.T.
I_AS
0.01 Ω
+
- ^VDD
A
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91096
S-80567-Rev. A, 20-Jun-08
V_DS
t_p
I_AS
Fig. 12b - Unclamped Inductive Waveforms
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