IRF9Z34 Datasheet, PDF (5/8 Pages) Vishay Siliconix – Power MOSFET

Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF9Z34, SiHF9Z34
Vishay Siliconix
V_DS
V_GS
R_G
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+_VDD
Fig. 10a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
t_d(off) t_f
90 %
V_DS
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V_DS
Vary t_p to obtain
required I_AS
R_G
- 10 V
t_p
L
D.U.T
I_AS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
I_AS
V_DS
V_DD
t_p
V_DS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91092
S-81273-Rev. A, 16-Jun-08
www.vishay.com
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