IRF9Z14 Datasheet, PDF (5/9 Pages) International Rectifier – Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A)

7.5
6.0
4.5
3.0
1.5
0.0
25
50
75 100 125 150 175
91088_09
T_C, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRF9Z14, SiHF9Z14
Vishay Siliconix
V_DS
V_GS
R_G
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+V_DD
Fig. 10a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
t_d(off) t_f
90 %
V_DS
Fig. 10b - Switching Time Waveforms
10
D = 0.5
1
0.2
0.1
0.05
0.02
0.1 _0.01
Single Pulse
(Thermal Response)
10^-2
10^-5
10^-4
10^-3
10^-2
P_DM
t₁
t₂
Notes:
1. Duty Factor, D = t₁/t₂
2. Peak T_j = P_DM x Z_thJC + T_C
0.1
1
10
91088_11
t₁, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91088
S11-0513-Rev. B, 21-Mar-11
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5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000