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IRF840L Datasheet, PDF (5/9 Pages) Vishay Siliconix – Ease of Paralleling
IRF840L, SiHF840L
Vishay Siliconix
8.0
6.0
4.0
2.0
0.0
25
91069_09
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
10
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
10-3
10-5
91069_11
Single Pulse
(Thermal Response)
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (S)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1
10
102
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
Rg
10 V
tp
L
D.U.T.
IAS
0.01 W
+
- VDD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91069
S10-2554-Rev. B, 08-Nov-10
www.vishay.com
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