DG611_11 Datasheet, PDF (5/15 Pages) Vishay Siliconix – High-Speed, Low-Glitch D/CMOS Analog Switches

DG611, DG612, DG613
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIES^a
Parameter
Analog Switch
Analog Signal Range^e
Switch On-Resistance
Dynamic Characteristics
Turn-On Time^e
Turn-Off Time^e
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 3 V
V_L = 5 V, V_IN = 4 V, 1 V^f
Temp.^b
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Ty.p^c Min.^d Max.^d Min.^d Max.^d Unit
V_ANALOG
Full
0
7
0
7
V
R_DS(on)
I_S = - 1 mA, V_D = 1 V
Room 25
60
60 
t_ON
R_L = 300 C_L = 3 pF
Room 15
t_OFF
V_S = 2 V,
See test circuit, figure 2
Room 10
30
30
ns
25
25
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
g. Q = |Q at V_S = 3 V - Q at V_S = - 3 V|.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
400
I_S = - 1 mA
350
300
V+ = 5 V
250
V- = - 5 V
V+ = 12 V
V- = - 5 V
200
V+ = 15 V
V- = - 3 V
150
100
50
0
- 5 - 4 - 2 0 2 4 6 8 10 12
V_D - Drain Voltage (V)
R_DS(on) vs. V_D and Power Supply Voltages
3
V+ = 15 V
V- = - 3 V
2
1
I_S(off), I_D(off)
0
-1
-2
I_D(on)
-3
-4
-2
0
2
4
6
8
10
V_D or V_S - Drain or Source Voltage (V)
Leakage Current vs. Analog Voltage
Document Number: 70057
S11-0154-Rev. I, 31-Jan-11
www.vishay.com
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