DG611 Datasheet, PDF (5/8 Pages) Vishay Siliconix – High-Speed, Low-Glitch D/CMOS Analog Switches

DG611/612/613
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r_DS(on) vs. V_D and Power Supply Voltages
400
I_S = –1 mA
350
V+ = 12 V
300
V– = –5 V
V+ = 5 V
250
V– = –5 V
200
V+ = 15 V
V– = –3 V
150
100
50
0
–5 –4 –2
02468
V_D – Drain Voltage (V)
10 12
r_DS(on) vs. V_D and Temperature
400
V+ = 15 V
350 ^{V– = –3 V}
I_S = –1 mA
300
250
200
150
25_C
100
50
125_C
–55_C
0
–4 –2 0 2 4 6 8 10 12
V_D – Drain Voltage (V)
Leakage Current vs. Analog Voltage
3
V+ = 15 V
V– = –3 V
2
10 nA
1 nA
Leakage Currents vs. Temperature
1
I_S(off), I_D(off)
0
–1
–2
I_D(on)
100 pA
10 pA
1 pA
I_D(on)
I_S(off), I_D(off)
–3
–4 –2
0
2
4
6
8
10
V_D or V_S – Drain or Source Voltage (V)
0.1 pA
–55 –25
0 25 50 75
Temperature (_C)
100 125
Input Switching Threshold vs. V_L
6
V+ = 15 V
5
V– = –3 V
4
3
2
1
0
0
5
10
15
V_L – Logic Supply Voltage (V)
Switching Times vs. Temperature
24
22
20
18
t_ON
16
14
t_OFF
12
10
8
6
V+ = 15 V
V– = –3 V
4
R_L = 300 W
2
C_L = 10 pF
0
–55 –35 –15 5 25 45 65 85 105 125
Temperature (_C)
Document Number: 70057
S-00399—Rev. G, 13-Sep-99
www.vishay.com S FaxBack 408-970-5600
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