DG508B Datasheet, PDF (5/18 Pages) Vishay Siliconix – Precision 8-Channel/Dual 4-Channel CMOS Analog Multiplexers

DG508B, DG509B
Vishay Siliconix
SPECIFICATIONS (Single Supply 12 V)
Parameter
Analog Switch
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V (± 10 %)
V_AX, V_EN = 2.0 V, 0.8 V^a
- 40 °C to 125 °C - 40 °C to 85 °C
Temp.^b Typ.^c Min.^d Max.^d Min.^d Max.^d Unit
Channel On Leakage Current I_D(on)
V+ = 12 V, V- = 0 V
V_S = V_D = 0 V/10 V
Room
DG508B
Full
Room
DG509B
Full
-1
1
-1
1
- 100 100 - 100 100
nA
-1
1
-1
1
- 50
50
- 50
50
Digital Control
Logic High Input Voltage
Logic Low Input Voltage
Logic High Input Current
Logic Low Input Current
Logic Input Capacitance^e
Dynamic Characteristics
V_INH
V_INL
I_IH
I_IL
C_in
V_AX, V_EN = 2.0 V
V_AX, V_EN = 0.8 V
f = 1 MHz
Full
Full
Full
Full
Room 4
2.0
2.0
0.8
-1
1
-1
-1
1
-1
V
0.8
1
µA
1
pF
Transition Time
t_TRANS
VS₁ = 10 V/0 V, VS₈ = 0 V/10 V, ^Room
R_L = 1 M, C_L = 35 pF
Full
165
400
550
400
500
Break-Before-Make Interval
t_OPEN
VS₁ = VS₈ = 5 V, C_L = 35 pF,
R_L = 1 k
Room 37
Full
15
1
15
1
ns
Room 125
300
300
Enable Turn-On Time
t_ON(EN)
VS₁ = 5 V, VS₂ to VS₈ = 0 V,
Full
550
425
R_L = 1 k, C_L = 35 pF
Room 75
250
250
Enable Turn-Off Time
t_OFF(EN)
Full
350
300
Charge Injection^e
Off Isolation^e
Crosstalk^e
- 3 dB Bandwidth^e
Q_INJ C_L = 1 nF, R_GEN = 0 , V_GEN = 0 V Full
2.5
OIRR
X_TALK
C_L = 5 pF, R_L = 50 
f = 1 MHz
Room - 80
Room - 88
BW
R_L = 50 
Room 200
pC
dB
MHz
Total Harmonic Distortion^e
THD
R_L = 10 k, 5 V_RMS,
f = 20 Hz to 20 kHz
Room 0.26
%
Source Off Capacitance^e
C_S(off)
2
Drain Off Capacitance^e
C_D(off)
f = 1 MHz
DG508B
13
DG509B Room 8
pF
Channel On Capacitance^e
C_D(on)
DG508B
17
DG509B
12
Power Supply
Room 0.01
0.5
Power Supply Current
I+
V_AX, V_EN = 0 V, or V+
Full
0.6
0.5
mA
0.6
Notes:
a. V_AX, V_EN = input voltage perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. R_DS(on) = R_DS(on) max. - R_DS(on) min.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 64821
S10-2817-Rev. D, 20-Dec-10
www.vishay.com
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