DG308B Datasheet, PDF (5/10 Pages) Vishay Siliconix – Improved Quad CMOS Analog Switches

DG308B/309B
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
11 0
100
90
±5V
80
70
60
± 10 V
50
± 15 V
40
± 20 V
30
20
10
- 20 - 16 - 12 - 8 - 4 0 4 8 12 16 20
V_D – Drain Voltage (V)
r_DS(on) vs. V_D and Power Supply Voltages
100
V+ = 15 V
90
V- = - 15 V
80
70
60
125 °C
50
85 °C
40
25 °C
30
- 55 °C
20
10
0
- 15 - 10
-5
0
5
10
15
V_D – Drain Voltage (V)
r_DS(on) vs. V_D and Temperature
250
225
V+ = 5 V
200
175
150
7V
125
10 V
100
12 V
75
15 V
50
25
0
0 2 4 6 8 10 12 14 16
V_D – Drain Voltage (V)
r_DS(on) vs. V_D and Single Power Supply Voltages
1 nA
V+ = 15 V
V- = - 15 V
V_S, V_D = ± 14 V
40
30
V+ = 22 V
V- = - 22 V
T_A = 25 °C
20
10
I_D(on)
0
I_S(off), I_D(off)
- 10
- 20
- 30
- 40
- 20 - 15 - 10 - 5
0
5 10 15 20
Analog Voltage
Leakage Currents vs. Analog Voltage
30
20
100 pA
10 pA
I_S(off), I_D(off)
10
V+ = 15 V
0
V- = - 15 V
- 10
- 20
V+ = 12 V
V- = 0 V
1 pA
- 55 - 35 - 15 5 25 45 65 85 105 125
Temperature (°C)
Leakage Currents vs. Temperature
- 30
- 15 - 10
-5
0
5
10
15
Analog Voltage (V)
Q_S, Q_D – Charge Injection vs. Analog Voltage
Document Number: 70047
S-71241–Rev. F, 25-Jun-07
www.vishay.com
5