VS-UFL230FA60 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 230 A

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VS-UFL230FA60
Vishay Semiconductors
175
150
125
100
DC
75
50
Square wave (D = 0.50)
25
80 % Rated V_R applied
0
0 40 80 120 160 200 240 280
93635_05
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
500
400
300
RMS Limit
D = 0.20
200
D = 0.25
D = 0.33
D = 0.50
100
DC
D = 0.75
0
0 40 80 120 160 200 240 280
93635_06
Average Forward Current - I_F(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
50
250
230
T_J = 125 °C
210
190
170
150
130
110
90
70
50
100
T_J = 25 °C
1000
93635_07
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
5000
4500
4000
3500
3000
T_J = 125 °C
2500
2000
1500
1000
500
0
100
T_J = 25 °C
1000
93635_08
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
40
30
T_J = 125 °C
20
10
T_J = 25 °C
0
100
93635_9
dI_F/dt (A/μs)
Fig. 9 - Typical I_rr Diode vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd +PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6); 
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
1000
Revision: 31-May-16
4
Document Number: 93635
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