VS-HFA16TA60CPBF Datasheet, PDF (4/7 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA16TA60CPbF, VS-HFA16TA60C-N3
Vishay Semiconductors
80
I_F = 16 A
I_F = 8.0 A
I_F = 4.0 A
60
40
20
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
0
100
1000
dI_F/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt
(Per Leg)
20
16
I_F = 16 A
I_F = 8.0 A
12
I_F = 4.0 A
8
500
400
I_F = 16 A
I_F = 8.0 A
300
I_F = 4.0 A
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
200
100
0
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI_F/dt
(Per Leg)
10 000
1000
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
I_F = 16 A
I_F = 8.0 A
I_F = 4.0 A
4
0
100
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI_F/dt
(Per Leg)
100
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical dI_(rec)M/dt vs. dI_F/dt
(Per Leg)
I_F
0
(3)
t_rr
t_a
t_b
(2) _IRRM
(4)
Q_rr
0.5 I_RRM
dI_(rec)M/dt ⁽⁵⁾
(1) ^dIF^/dt
0.75 I_RRM
(1) dI_F/dt - rate of change of current
through zero crossing
(4) Q_rr - area under curve defined by t_rr
and I_RRM
(2) I_RRM - peak reverse recovery current
(3) t_rr - reverse recovery time measured
from zero crossing point of negative
going I_F to point where a line passing
through 0.75 I_RRM and 0.50 I_RRM
extrapolated to zero current.
Q_rr =
t_rr x I_RRM
2
(5) dI_(rec)M/dt - peak rate of change of
current during t_b portion of t_rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 04-May-16
4
Document Number: 94058
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