VS-HFA140FA120 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Ultrafast Soft Recovery Diode, 140 A

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175
150
125
100
DC
75
50 ^{Square wave (D = 0.50)}
80 % rated V_R applied
25
0
0
20
40
60
80 100 120
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
500
400
300
RMS limit
200
100
0
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
20 40 60 80 100 120 140
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
VS-HFA140FA120
Vishay Semiconductors
300
I_F = 50 A
V_R = 200 V
250
T_J = 125 °C
200
150
T_J = 25 °C
100
50
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
3000
2500
I_F = 50 A
V_R = 200 V
2000
1500
T_J = 125 °C
1000
500
T_J = 25 °C
0
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
40
I_F = 50 A
V_R = 200 V
30
T_J = 125 °C
20
T_J = 25 °C
10
0
100
1000
dI_F/dt (A/µs)
Fig. 9 - Typical Peak Recovery Current vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 5); 
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
Revision: 20-Jul-12
4
Document Number: 94746
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