VS-HFA04TB60PBF Datasheet, PDF (4/8 Pages) International Rectifier – Ultrafast, Soft Recovery Diode

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VS-HFA04TB60PbF, VS-HFA04TB60-N3
Vishay Semiconductors
50
45
I_F = 8 A
I_F = 4 A
40
35
30
25 ^VR ^{= 200 V}
T_J = 125 °C
T_J = 25 °C
20
100
1000
dI_F/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt
200
180
V_R = 200 V
T_J = 125 °C
160 ^{TJ = 25 °C}
140
I_F = 8 A
120
I_F = 4 A
100
80
60
40
20
0
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI_F/dt
14
12
I_F = 8 A
I_F = 4 A
10
8
6
4
2
0
100
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI_F/dt
1000
I_F = 8 A
I_F = 4 A
100
100
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 8 - Typical dI_(rec)M/dt vs. dI_F/dt
Revision: 22-Jun-15
4
Document Number: 94035
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