VS-GB50LA120UX Datasheet, PDF (4/10 Pages) Vishay Siliconix – Low Side Chopper IGBT SOT-227 (Ultrafast IGBT), 50 A

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5.5
T_J = 25 °C
5.0
4.5
4.0
T_J = 125 °C
3.5
3.0
0.0002
0.0004
0.0006
0.0008
0.001
I_C (mA)
Fig. 5 - Typical IGBT Threshold Voltage
6
5
100 A
4
50 A
3
25 A
2
10 30 50 70 90 110 130 150
T_J (°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V_GE = 15 V
160
140
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70 80
I_F - Continuous Forward Current (A)
Fig. 7 - Maximum DC Forward Current vs.
Case Temperature
VS-GB50LA120UX
Vishay Semiconductors
200
175
150
125
T_J = 25 °C
100
T_J = 125 °C
75
50
25
0
0
1
2
3
4
5
6
V_FM (V)
Fig. 8 - Typical Diode Forward Characteristics
4
3
E_on
2
E_off
1
0
10
20
30
40
50
1000
I_C (A)
Fig. 9 - Typical IGBT Energy Loss vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
t_d(off)
t_d(on)
100
t_f
t_r
10
0
10
20
30
40
50
60
I_C (A)
Fig. 10 - Typical IGBT Switching Time vs. I_C
T_J = 125 °C, L = 500 μH, V_CC = 600 V,
R_g = 5 , V_GE = 15 V
Revision: 30-Jul-13
4
Document Number: 93102
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