VS-ETU3006SHM3 Datasheet, PDF (4/6 Pages) Vishay Siliconix – Ultrafast recovery time

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VS-ETU3006SHM3, VS-ETU3006-1HM3
Vishay Semiconductors
130
120
110
100
90
80
70
60
50
40
30
20
10
100
I_F = 30 A, 125 °C
I_F = 30 A, 25 °C
typical value
1000
dI_Fdt (A/μs)
Fig. 7 - Typical Reverse Recovery vs. dI_F/dt
1800
1600
1400
1200
1000
I_F = 30 A, 125 °C
800
600
400
200
0
100
I_F = 30 A, 25 °C
typical value
1000
dI_Fdt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
V_R = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dI_F/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
I_F
0
(3)
t_rr
t_a
t_b
(2) _IRRM
(4)
Q_rr
0.5 I_RRM
dI_(rec)M/dt ⁽⁵⁾
0.75 I_RRM
(1) ^dIF^/dt
(1) dI_F/dt - rate of change of current
through zero crossing
(4) Q_rr - area under curve defined by t_rr
and I_RRM
(2) I_RRM - peak reverse recovery current
(3) t_rr - reverse recovery time measured
from zero crossing point of negative
going I_F to point where a line passing
through 0.75 I_RRM and 0.50 I_RRM
extrapolated to zero current.
Q_rr =
t_rr x I_RRM
2
(5) dI_(rec)M/dt - peak rate of change of
current during t_b portion of t_rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
4
Document Number: 94702
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