VS-80EBU04HF4 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Ultrafast recovery time

www.vishay.com
180
170
160
150
140
DC
130
120
110
100 _{Square wave (d = 0.50)}
90 ^{rated Vr applied}
80
0
20 40 60
80 100 120
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
1 40
RMS Limit
1 20
1 00
80
60
40
20
0
0
20 40
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
60 80 100 120
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
VS-80EBU04HF4
Vishay Semiconductors
250
TV_Jr
= 200 V
= 125 ˚C
T_J = 25 ˚C
200
150
III_FFF
=
=
=
160 A
80 A
40 A
100
50
100
1000
dI_F/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
4500
4000
3500
3000
2500
2000
V_r = 200 V
T_J = 125 ˚C
T_J = 25 ˚C
I_F = 160 A
I_F = 80 A
I_F = 40 A
1500
1000
500
0
100
1000
dI_F/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
I_F
0
(3)
t_rr
t_a
t_b
(2) _IRRM
(4)
Q_rr
0.5 I_RRM
dI_(rec)M/dt ⁽⁵⁾
(1) ^dIF^/dt
0.75 I_RRM
(1) dI_F/dt - rate of change of current
through zero crossing
(2) I_RRM - peak reverse recovery current
(3) t_rr - reverse recovery time measured
from zero crossing point of negative
going I_F to point where a line passing
through 0.75 I_RRM and 0.50 I_RRM
extrapolated to zero current.
(4) Q_rr - area under curve defined by t_rr
and I_RRM
Q_rr =
t_rr x I_RRM
2
(5) dI_(rec)M/dt - peak rate of change of
current during t_b portion of t_rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 16-Jun-15
4
Document Number: 93997
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000