VS-150MT060WDF Datasheet, PDF (4/11 Pages) Vishay Siliconix – MTP IGBT Power Module Primary Dual Forward

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VS-150MT060WDF
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL MIN. TYP. MAX. UNITS
IGBT
Junction to case IGBT thermal resistance
-
-
0.23
AP FRED Pt
FRED Pt
Junction to case diode thermal resistance
Junction to case diode thermal resistance
-
R_thJC
-
-
5.1
°C/W
-
2.2
Case to sink, flat, greased surface per module
Mounting torque ± 10 % to heatsink ⁽¹⁾
R_thCS
-
0.06
-
°C/W
-
-
4
Nm
Approximate weight
-
65
-
g
Note
(1) _{A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the}
compound.
160
140
120
100
DC
80
60
40
20
0
0 20 40 60 80 100 120 140 160
I_C - Continuous Collector Current (A)
Fig. 1 - Allowable Case Temperature vs. Continuous Collector
Current (Maximum IGBT Continuous Collector Current vs. Case
Temperature)
1000
100
10
1
0.1
1
10
100
1000
V_CE (V)
Fig. 2 - I_C vs. V_CE
(IGBT Reverse BIAS SOA, T_J = 150 °C, V_GE = 15 V)
300
250
T_J = 25 °C
200
T_J = 125 °C
150
T_J = 150 °C
100
50
0
0
1.0 2.0 3.0 4.0 5.0 6.0
V_CE (V)
Fig. 3 - I_C vs. V_CE
(Typical IGBT Output Characteristics, V_GE = 15 V)
300
V_GE = 12 V
250
V_GE = 15 V
V_GE = 18 V
200
V_GE = 9 V
150
100
50
0
0
1.0 2.0 3.0 4.0 5.0 6.0
V_CE (V)
Fig. 4 - I_C vs. V_CE
(Typical IGBT Output Characteristics, T_J = 125 °C)
Revision: 10-Jun-15
4
Document Number: 95716
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