VP0300L Datasheet, PDF (4/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFETs

VP0300L/LS, VQ2001J/P
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Gate-to-Source Voltage
3.0
I_D = –0.5 A
2.5
2.0
1.5
I_D = –0.2 A
1.0
–10 K
–1 K
Threshold Region
V_DS = –10 V
T_J = 150_C
–100
100_C
25_C
–10
–55_C
0
0
–4
–8
–12
–16
–20
V_GS – Gate-to-Source Voltage (V)
–1
–1.0
–1.5 –2.0 –2.5 –3.0 –3.5
V_GS – Gate-Source Voltage (V)
–4.0
THERMAL RATINGS
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VP0300L Only)
1
Duty Cycle = 0.5
0.2
0.1
0.1 ^0.05
0.02
0.01
0.1
0.01
Single Pulse
1
DEVICE MARKINGS
10
100
t₁ – Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 156_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
1K
10 K
Front View:
VP0300L
“S” VP
0300L
xxyy
VP0300LS
“S” VP
0300LS
xxyy
Top View:
VQ2001J
VQ2001J
“S”f//xxyy
VP0300LS
VQ2001P
“S”f//xxyy
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
www.vishay.com
11-4
Document Number: 70217
S-04279—Rev. E, 16-Jul-01