VN10KLS Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFETs with Zener Gate

VN0610L, VN10KLS, VN2222L
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
Capacitance
100
V_GS = 0 V
f = 1 MHz
80
1
T_J = 150_C
100_C
0_C
0.1 ^25_C
–55_C
0.01
0 0.25 0.5 0.75 1.0 1.25 1.5 1.75
V_GS – Gate-to-Source Voltage (V)
60
C_iss
40
C_oss
20
C_rss
0
0
10
20
30
40
50
V_DS – Drain-to-Source Voltage (V)
Gate Charge
15.0
I_D = 0.5 A
12.5
10.0
V_DS = 30 V
Load Condition Effects on Switching
100
V_DD = 15 V
R_L = 25 W
V_GS = 0 to 10 V
7.5
10
5.0
48 V
2.5
0
0
100 200 300 400 500 600
Q_g – Total Gate Charge (pC)
1
0.1
0.5
I_D – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
t_d(off)
t_f
t_d(on)
t_r
1.0
0.2
0.1
0.1 ^0.05
0.02
0.01
0.1
0.01
Single Pulse
1
www.vishay.com
11-4
10
100
t₁ – Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 156_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
1K
10 K
Document Number: 70213
S-04279—Rev. F, 16-Jul-01