V15W60C-M3_15 Datasheet, PDF (4/5 Pages) Vishay Siliconix – Dual Trench MOS Barrier Schottky Rectifier

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PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
V15W60C-M3
Vishay General Semiconductor
TO-252 (D-PAK)
E
b3
A
0.002"
c
- A - 0.05 mm
Mounting Pad Layout
in inches (millimeters)
0.244
(6.2)
MIN.
L3
D
b2
1.55 mm REF.
L4
b
e
See detail A
H
A1
c
0.39 (9.9)
0.488 (12.4)
0.086 (2.19)
0.094 (2.39)
0.256
(6.5)
MIN.
0.094
(2.4)
MIN.
0.051
(1.3)
MIN.
D1
L2
E1
θ
L
0.004"
0.1 mm
SYMBOL
MIN.
INCHES
MAX.
A
0.086
0.094
A1
-
0.005
b
0.025
0.035
b2
0.033
0.045
b3
0.205
0.215
c
0.018
0.024
D
0.235
0.250
D1
0.205
-
E
0.250
0.265
E1
0.190
-
e
0.090 BSC.
H
0.380
0.410
L
0.055
0.070
L2
0.020 BSC.
L3
0.035
0.050
L4
0.025
0.039

0°
8°
Note
• Conforms to JEDEC TO-252 variation AA except dimension “D”
MIN.
2.19
-
0.64
0.84
5.21
0.46
5.97
5.21
6.35
4.83
9.65
1.40
0.89
0.64
0°
MILLIMETERS
2.29 BSC.
0.51 BSC.
MAX.
2.38
0.13
0.89
1.14
5.46
0.61
6.22
-
6.73
-
10.41
1.78
1.27
1.01
8°
Revision: 04-Dec-13
4
Document Number: 89974
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