TSHA5200_08 Datasheet, PDF (4/6 Pages) Vishay Siliconix – Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

TSHA5200, TSHA5201, TSHA5202, TSHA5203
Vishay Semiconductors ^{Infrared Emitting Diode, RoHS Compliant,}
875 nm, GaAlAs
1.2
1.1
I = 10 mA
F
1.0
0.9
0.8
0.7
0
94 7990
20
40
60
80 100
T_amb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
1000
100
TSHA 5203
TSHA 5202
TSHA 5201
10
TSHA 5200
1
10⁰
94 8006
10¹
10²
10³
10⁴
I_F - Forward Current (mA)
Fig. 6 - Radiant Intensity vs. Forward Current
1000
100
10
1
0.1
10 ⁰
94 8007
10 ¹
10 ²
10 ³
10 ⁴
I_F - Forward Current (mA)
Fig. 7 - Radiant Power vs. Forward Current
1.6
1.2
I_F = 20 mA
0.8
0.4
0
- 10 0 10
50
100
140
94 8020
T_amb - Ambient Temperature (°C)
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
1.25
1.0
0.75
0.5
0.25
I_F = 100 mA
Φ _e ( λ ) _rel = Φ _e ( λ ) / Φ _e ( λ _p )
0
780
880
980
94 8000
λ - Wavelenght (nm)
Fig. 9 - Relative Radiant Power vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
0.7
70°
80°
0.6 0.4 0.2 0
94 8008
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
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Document Number: 81019
Rev. 1.7, 05-Sep-08