TSAL7300_09 Datasheet, PDF (4/5 Pages) Vishay Siliconix – High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

TSAL7300
Vishay Semiconductors ^{High Power Infrared Emitting Diode,}
940 nm, GaAlAs/GaAs
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
94 8883 ^{0.6 0.4 0.2}
0
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
A
C
R2.49 (sphere)
0.6
+ 0.2
- 0.1
Area not plane
Ø 5 ± 0.15
0.5
+ 0.15
- 0.05
2.54 nom.
0.5
+ 0.15
- 0.05
6.544-5259.05-4
Issue: 8; 19.05.09
96 12126
www.vishay.com
4
For technical questions, contact: [e-mail]
technical drawings
according to DIN
specifications
Document Number: 81013
Rev. 1.6, 29-Jun-09