TN0205A Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 20-V MOSFET

TN0205A/AD
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
3
On-Resistance vs. Gate-to-Source Voltage
8
1
T_J = 125_C
0.1
T_J = 25_C
6
I_D = 250 mA
4
0.01
2
T_J = –55_C
0.001
0.00
0.3
0.6
0.9
1.2
V_SD – Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
Threshold Voltage
0.2
0.1
I_D = 50 mA
–0.0
–0.1
–0.2
–0.3
–0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
www.vishay.com
11-4
Document Number: 70868
S-04279—Rev. B, 16-Jul-01