SUY50N03-07AP Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 30-V D-S 175C MOSFET

SUY50N03-07AP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.0
100
V_GS = 10 V
I_D = 30 A
1.6
Source-Drain Diode Forward Voltage
T_J = 150_C
1.2
10
0.8
T_J = 25_C
0.4
0.0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
30
1
0
0.3
0.6
0.9
1.2
V_SD – Source-to-Drain Voltage (V)
1000
Safe Operating Area
Limited by r_DS(on)
24
100
10 ms
100 ms
18
10
1 ms
10 ms
12
1
100 ms
1s
10 s
6
0.1
T_A = 25_C
Single Pulse
100 s,
dc
0
0
25 50 75 100 125 150 175
T_C – Case Temperature (_C)
0.01
0.1
1
10
100
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
0.01
10^–4
Single Pulse
10^–3
www.vishay.com
4
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71653
S-05114—Rev. B, 19-Nov-01