SUP90N06-05L Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) 175C MOSFET

SUP90N06-05L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
100
2.1
V_GS = 10 V
I_D = 30 A
1.8
1.5
1.2
10
0.9
0.6
0.3
0.0
1
−50 −25 0 25 50 75 100 125 150 175
0
T_J − Junction Temperature (_C)
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.3
0.6
0.9
1.2
V_SD − Source-to-Drain Voltage (V)
1000
100
Avalanche Current vs. Time
I_AV (A) @ T_A = 25_C
10
1
I_AV (A) @ T_A = 150_C
0.1
0.00001 0.0001 0.001
0.01
0.1
1
t_in (Sec)
Drain Source Breakdown vs.
Junction Temperature
74
72
I_D = 10 mA
70
68
66
64
62
60
−50 −25 0
25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
www.vishay.com
4
Document Number: 73037
S-41504—Rev. A, 09-Aug-04