SUM80090E Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 150 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SUM80090E
Vishay Siliconix
2.5
I_D = 30 A
2.1
1.7
1.3
0.9
Axis Title
10000
V_GS = 10 V
1000
V_GS = 7.5 V
100
Axis Title
1.0
10000
0.4
1000
-0.2
I_D = 5 mA
-0.8
100
I_D = 250 μA
-1.4
0.5
10
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
-2.0
-50 -25
10
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
2nd line
Threshold Voltage
0.05
Axis Title
10000
0.04
0.03
1000
0.02
T_J = 125 °C
100
0.01
0
4
T_J = 25 °C
5
6
7
8
9
V_GS - Gate-to-Source Voltage (V)
2nd line
10
10
On-Resistance vs. Gate-to-Source Voltage
200
I_D = 250 μA
190
Axis Title
180
170
10000
1000
100
160
-50 -25
10
0 25 50 75 100 125 150 175
T_J - Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
Axis Title
100
10000
10
1
0.1
0.01
T_J = 150 °C
T_J = 25 °C
1000
100
0.001
0
0.2 0.4 0.6 0.8 1.0
V_SD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source Drain Diode Forward Voltage
Axis Title
150
10000
120
1000
90
60
100
30
0
10
0 25 50 75 100 125 150 175
T_C - Case Temperature (°C)
2nd line
Current De-Rating
S16-0087-Rev. A, 25-Jan-16
4
Document Number: 64434
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000