SUM60N02-3M9P Datasheet, PDF (4/6 Pages) Vishay Siliconix – N-Channel 20-V (D-S) 175 °C MOSFET

SUM60N02-3m9P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
2.0
I_D = 50 A
V_DS = 10 V
8
1.7
I_D = 20 A
V_DS = 16 V
6
1.4
4
1.1
V_GS = 10 V
V_GS = 4.5 V
2
0.8
0
0
100
10
1
20
40
60
80
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
T_J = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
33
32
I_D = 1 mA
31
30
29
28
27
26
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Typical Drain-Source Brakdown Voltage
vs. Junction Temperature
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4
0.5
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.5
0.0
- 0.5
- 1.0
I_D = 5 mA
I_D = 250 µA
- 1.5
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
100
T_J = 150 °C
10
T_J = 25 °C
1
0.00001 0.0001 0.001
0.01
0.10
1
t _in (s)
Single Pulse Avalanche Current vs. Time
Document Number: 69820
S-80183-Rev. A, 04-Feb-08