SUM40010EL Datasheet, PDF (4/9 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
1.7
2.3
1.45
1.2
0.95
V_GS = 10 V, I_D = 30 A
1.9
1.5
V_GS = 4.5 V, I_D = 30 A
1.1
0.7
SUM40010EL
Vishay Siliconix
I_D = 250 μA
0.7
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.005
0.004
I_D = 30 A
0.003
0.002
0.001
T_J = 125 °C
T_J = 25 °C
0.3
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
51
I_D = 250 μA
49
47
45
0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
43
- 50 - 25 0 25 50 75 100 125 150 175
T_J - Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
440
330
T_J = 150 °C
10
220
T_J = 25 °C
1
110
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Current De-rating
S15-2184-Rev. A, 14-Sep-15
4
Document Number: 66984
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