SUM23N15-73 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 150-V (D-S) 175 C MOSFET

SUM23N15-73
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.7
2.4
V_GS = 10 V
I_D = 15 A
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
190
180
I_D = 1.0 mA
170
160
150
140
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
www.vishay.com
4
Document Number: 72143
S-03535—Rev. A, 24-Mar-03