SUM110N08-07 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

SUM110N08-07
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 30 A
2.0
Source-Drain Diode Forward Voltage
1.5
T_J = 150_C
T_J = 25_C
10
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
100
10
I_AV (A) @ T_A = 25_C
1
I_AV (A) @ T_A = 150_C
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (Sec)
Drain Source Breakdown vs.
Junction Temperature
100
94
I_D = 250 mA
88
82
76
70
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (_C)
www.vishay.com
4
Document Number: 71829
S-21863—Rev. C, 21-Oct-02