SUM110N06-04L Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 60-V (D-S) 200C MOSFET

SUM110N06-04L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 30 A
2.0
Source-Drain Diode Forward Voltage
1.5
T_J = 150_C
T_J = 25_C
10
1.0
0.5
0.0
–50 –25 0 25 50 75 100 125 150 175 200
T_J – Junction Temperature (_C)
1
0
0.3
0.6
0.9
1.2
V_SD – Source-to-Drain Voltage (V)
1000
100
Avalanche Current vs. Time
I_AV (A) @ T_A = 25_C
10
1
I_AV (A) @ T_A = 150_C
0.1
0.00001 0.0001
0.001
0.01
0.1
t_in (Sec)
Drain Source Breakdown vs.
Junction Temperature
80
75
I_D = 10 mA
70
65
60
–50 –25 0 25 50 75 100 125 150 175 200
T_J – Junction Temperature (_C)
www.vishay.com
4
Document Number: 71704
S-20417—Rev. B, 08-Apr-02