SUM110N04-03 Datasheet, PDF (4/5 Pages) Vishay Siliconix – N-Channel 40-V (D-S) 200C MOSFET

SUM110N04-03
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.1
100
V_GS = 10 V
1.8
I_D = 30 A
1.5
1.2
10
0.9
0.6
0.3
0.0
1
- 50 - 25 0 25 50 75 100 125 150 175 200
0
T_J - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
100
I_AV (A) @ T_A = 25_C
10
I_AV (A) @ T_A = 150_C
1
0.1
0.00001 0.0001 0.001 0.01
0.1
1
t_in (Sec)
Drain Source Breakdown vs.
Junction Temperature
56
52
I_D = 10 mA
48
44
40
- 50 - 25 0 25 50 75 100 125 150 175 200
T_J - Junction Temperature (_C)
www.vishay.com
4
Document Number: 71745
S-31061—Rev. C, 26-May-03