SUD50P06-15 Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SUD50P06-15
Vishay Siliconix
TYPICAL CHARACTERISTICS
2.0
V_GS = 10 V
1.8
I_D = 17 A
25 °C, unless otherwise noted
100
1.6
1.4
T_J = 150 °C
T_J = 25 °C
10
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
60
50
40
30
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
Limited by R_DS(on)*
P(t) = 0.0001
BVDSS Limited
10
20
10
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Drain Current vs. Case Temperature
2
1
Duty Cycle = 0.5
P(t) = 0.001
T_C = 25 °C
Single Pulse
1
0.1
1
P(t) = 0.1
P(t) = 1
10
P(t) = 0.01
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 ^{- 4}
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68940.
www.vishay.com
4
Document Number: 68940
S-82285-Rev. A, 22-Sep-08