SUD50P04-15_05 Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 40-V (D-S), 175C MOSFET

SUD50P04-15
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 30 A
2.0
1.5
10
1.0
Source-Drain Diode Forward Voltage
T_J = 150_C
T_J = 25_C
0.5
0
–50 –25
0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
60
1
0
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
500
50
100
Limited
10 ms
by r_DS(on)
100 ms
40
1 ms
10
30
10 ms
20
100 ms
1
dc
T_C = 25_C
10
Single Pulse
0
0
25 50 75 100 125 150 175
0.1
0.1
1
10
100
T_C – Case Temperature (_C)
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 _{Duty Cycle = 0.5}
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10^–4
10^–3
www.vishay.com S FaxBack 408-970-5600
4
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 40_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Document Number: 71176
S-00830—Rev. A, 24-Apr-00