SUD42N03-3M9P Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

SUD42N03-3m9P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
2.1
T_J = 150 °C
10
1.8
I_D = 250 µA
1.5
T_J = 25 °C
1.2
1
0.9
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
5000
4000
C_iss
3000
2000
C_oss
1000
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 20 A
1.5
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
41
39
I_D = 250 µA
37
35
33
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
160
120
1.2
0.9 V_GS = 10 V
0.6
V_GS = 4.5 V
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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4
80
Package Limited
40
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating
Document Number: 66824
S10-2006-Rev. A, 06-Sep-10