SUD25N06-45L Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S), 175C MOSFET, Logic Level

SUD25N06-45L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
V_GS = 10 V
I_D = 12 A
2.0
Source-Drain Diode Forward Voltage
T_J = 150_C
1.5
T_J = 25_C
10
1.0
0.5
0
–50 –25
0 25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
1
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Drain Current vs. Case Temperature
30
24
18
12
6
Safe Operating Area
50
Limited
10
by r_DS(on)
1
T_C = 25_C
Single Pulse
100 µs
1 ms
10 ms
100 ms
dc, 1 s
0
0
25 50 75 100 125 150 175
0.1
0.1
1
10
100
T_C – Case Temperature (_C)
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.01
10^–4
0.05
0.02
Single Pulse
10^–3
www.vishay.com S FaxBack 408-970-5600
2-4
10^–2
Square Wave Pulse Duration (sec)
10^–1
1
3
Document Number: 70274
S-57253—Rev. E, 24-Feb-98