SUD06N10-225L Datasheet, PDF (4/4 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175C MOSFET

SUD06N10-225L
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
10
V_GS = 10 V
I_D = 3 A
2.0
Source-Drain Diode Forward Voltage
1.5
T_J = 175_C
1.0
T_J = 25_C
0.5
0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
8
6
4
1
0
0.2
0.4
0.6
0.8
1.0 1.2
V_SD – Source-to-Drain Voltage (V)
Safe Operating Area
10
Limited by r_DS(on)
1
10 ms
100 ms
1 ms
2
T_C = 25_C
Single Pulse
0
0
25 50 75 100 125 150 175
T_C – Case Temperature (_C)
0.1
0.1
1
10
V_DS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 _{Duty Cycle = 0.5}
0.2
10 ms
100 ms
1 s, dc
100
0.1
0.1
0.02
0.05
Single Pulse
0.01
10^–5
10^–4
10^–3
10^–2
10^–1
1
Square Wave Pulse Duration (sec)
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4
10
100
Document Number: 71253
S–01584—Rev. A, 17-Jul-00