SUB75P03-07 Datasheet, PDF (4/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) 175C MOSFET

SUP/SUB75P03-07
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.5
I_D = 30 A
1.2
0.9
0.6
0.3
0
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
Avalanche Current vs. Time
1000
100
I_AV (A) @ T_A = 25_C
Source-Drain Diode Forward Voltage
100
T_J = 150_C
10
T_J = 25_C
1
0
0.2
0.4
0.6
0.8
1.0
V_SD – Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
45
I_D = 250 mA
40
10
35
I_AV (A) @ T_A = 150_C
1
30
0.1
0.00001 0.0001 0.001
0.01
0.1
1
t_in (Sec)
25
–50 –25 0
25 50 75 100 125 150 175
T_J – Junction Temperature (_C)
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2-4
Document Number: 71109
S-00821—Rev. B, 24-Apr-00