SST4391-T1-E3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – N-Channel JFETs

2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
200
r_DS @ I_D = 1 mA, V_GS = 0 V
I_DSS @ V_DS = 20 V, V_GS = 0 V
80
160
60
r_DS
I_DSS
120
40
80
20
40
0
0
0
–2
–4
–6
–8
–10
V_GS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
I_D = 1 mA
r_DS changes X 0.7%/_C
160
120
V_GS(off) = –2 V
80
–4 V
40
–8 V
0
–55 –35 –15 5
25 45 65 85 105 125
T_A – Temperature (_C)
Turn-Off Switching
30
t_d(off) independent of device V_GS(off)
V_DD = 5 V, V_GS(L) = –10 V
24
18
V_GS(off) = –2 V
12
t_f
t_d(off)
6
V_GS(off) = –8 V
0
0
2
4
6
8
10
I_D – Drain Current (mA)
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7-4
On-Resistance vs. Drain Current
100
T_A = 25_C
80
V_GS(off) = –2 V
60
40
–4 V
20
–8 V
0
1
10
100
I_D – Drain Current (mA)
Turn-On Switching
5
t_r approximately independent of I_D
V_DD = 5 V, R_G = 50 W
V_GS(L) = –10 V
4
t_r
3
t_d(on) @
I_D = 12 mA
2
t_d(on) @
1
I_D = 3 mA
0
0
30
24
–2
–4
–6
–8
–10
V_GS(off) – Gate-Source Cutoff Voltage (V)
Capacitance vs. Gate-Source Voltage
f = 1 MHz
V_DS = 0 V
18
12
6
0
0
C_iss
C_rss
–4
–8
–12
–16
–20
V_GS – Gate-Source Voltage (V)
Document Number: 70241
S-04028—Rev. F, 04-Jan-01