SQS484EN Datasheet, PDF (4/13 Pages) Vishay Siliconix – Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
10
I_D = 16.2 A
8
6
V_DS = 20 V
2.0
I_D = 16.4 A
1.7
1.4
4
1.1
SQS484EN
Vishay Siliconix
V_GS = 10 V
V_GS = 4.5 V
2
0.8
0
0
100
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
10
T_J = 150 °C
1
0.1
T_J = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.5
0.1
-0.3
I_D = 5 mA
-0.7
I_D = 250 μA
-1.1
-1.5
-50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
0.04
0.03
0.02
T_J = 150 °C
0.01
0.00
0
T_J = 25 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
48
I_D = 1 mA
46
44
42
40
38
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-1860-Rev. B, 13-Aug-12
4
Document Number: 67066
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000