SQS401EN_15 Datasheet, PDF (4/14 Pages) Vishay Siliconix – Automotive P-Channel 40 V (D-S) 175 °C MOSFET

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SQS401EN
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
1.8
100
I_D = 11 A
1.6
V_GS = 10 V
10
1.4
1
V_GS = 4.5 V
1.2
0.1
1.0
0.01
0.8
T_J = 150 °C
T_J = 25 °C
0.6
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.25
1.1
0.20
0.8
I_D = 250 µA
0.15
0.5
I_D = 5 mA
0.10
0.2
0.05
T_J = 150 °C
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
- 40
I_D = 1 mA
- 42
- 0.1
- 0.4
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
- 44
- 46
- 48
- 50
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2129 Rev. C, 31-Oct-11
4
Document Number: 65529
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