SQM60030E Datasheet, PDF (4/9 Pages) Vishay Siliconix – Automotive N-Channel 80 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
2.1
100
I_D = 20 A
V_GS = 10 V
1.8
10
T_J = 150 °C
1.5
1
SQM60030E
Vishay Siliconix
1.2
0.1
T_J = 25 °C
0.9
0.01
0.6
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.015
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
0.6
0.012
0.1
0.009
0.006
T_J = 150 °C
0.003
T_J = 25 °C
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
- 0.4
- 0.9
- 1.4
I_D = 5 mA
I_D = 250 μA
- 1.9
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
100
I_D = 10 mA
97
94
91
1000
100
I_DM Limited
10
I_D Limited
1
Limited by R_DS(on)*
100 μs
1 ms
10 ms
100 ms, 1
10 s, DC
88
0.1 ^TC ^{= 25 °C}
BVDSS Limited
Single Pulse
85
- 50 - 25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
S15-2916-Rev. A, 14-Dec-15
4
Document Number: 67284
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